K4B2G1646F-BYMA产品信息：

品牌：三星

型号：K4B2G1646F-BYMA

容量：2GBIT（128M x 16  ）

技术：DDR3 SDARM

类别：集成电路IC

产品族：存储器

格式：闪存

Speed：1866 Mbps    

Voltage：1.35 V    

Temp.：0 ~ 85 °C    

Package：96FBGA    

Product Status：Mass Production    

Samsung DDR3's enhanced bandwidth and reliabilty drives a broad range of applications such as notebooks, desktops, and industrial solutions including automotive, all at double the speed of DDR2.

Samsung's industry-first 30 nm class DRAM consumes less power, lowering the TCO with a 30% reduction in power consumption versus the previous generation.

详细描述：K4B2G1646F-BYMA IC FLASH DDR3 SDARM 存储器 2GBIT 96FBGA